Electrical characteristics of ultrathin Hafnium oxynitrides deposited on Si-substrate
نویسندگان
چکیده
Hafnium oxide and Hafnium oxynitrides thin films are deposited on a Si substrate using reactive sputtering. Compared with Hafnium dioxide, Hafnium oxynitrides showed excellent electrical characteristics such as low leakage current density and low capacitance equivalent oxide thickness. By X-ray photoelectron spectroscopy (XPS), we were able to confirm nitrogen incorporation in the oxide bulk and at the Si-HfOxNy interface, which can repel the Si-O bonding in comparison with Hafnium oxide. It provides the adequate evidence to support the improved electrical characteristics.
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